Download Carrier transport in nanoscale MOS transistors by Hideaki Tsuchiya, Yoshinari Kamakura PDF

By Hideaki Tsuchiya, Yoshinari Kamakura

A complete complicated point exam of the delivery idea of nanoscale devices

  • Provides complex point fabric of electron shipping in nanoscale units from uncomplicated rules of quantum mechanics via to complicated thought and diverse numerical options for electron transport
  • Combines a number of updated theoretical and numerical methods in a unified demeanour, akin to Wigner-Boltzmann equation, the hot growth of provider shipping study for nanoscale MOS transistors, and quantum correction approximations
  • The authors technique the topic in a logical and systematic method, reflecting their broad educating and examine backgrounds

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Neophytou, T. Low, G. Klimeck and M. Lundstrom (Mar. 2008). A tight‐binding study of the ballistic injection velocity for ultrathin‐body SOI MOSFETs. IEEE Transactions on Electron Devices 55(3), 866–871. 9] H. Scheel, S. Reich and C. Thomsen (Oct. 2005). Electronic band structure of high‐index silicon nanowires. Physica Status Solidi (B) 242(12), 2474–2479. H. Lu and D. Grozea (2002). Crystalline Si/SiO2 quantum wells. Applied Physics Letters 80(2), 255–257. 11] S. Markov, B. ‐Y. Yam, H. Xie, T.

Wang, P. Matagne, B. Obradovic, C. Auth, S. Cea, T. Ghani, J. He, T. Hoffman, R. Kotlyar, Z. Ma, K. Mistry, R. Nagisetty, R. Shaheed, M. Stettler, C. D. Giles (Dec. 2004). Drive current enhancement in p‐type metal‐oxide‐semiconductor field‐effect transistors under shear uniaxial stress. Applied Physics Letters 85(25), 6188–6190. 18] K. Uchida, T. C. Saraswat and Y. Nishi (2005). Physical mechanisms of electron mobility enhancement in uniaxial stressed MOSFETs and impact of uniaxial stress engineering in ballistic regime.

28]. 7 V. 28(a), the V‐C contribution in the β‐quartz model is excessive, so the β‐quartz model indeed has different tunneling properties from the other models. 27(a). 7 V. 7 eV). 28 Three tunneling current components, C‐C, V‐V, and V‐C, computed for (a) β‐quartz, (b) β‐cristobalite and (c) β‐tridymite. The oxide thicknesses used in the calculation are indicated in each figure. 28. 40]. It is found that the β‐cristobalite and β‐tridymite models have similar current‐thickness properties, while the β‐quartz model gives at least two orders of magnitude lower current density.

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