Download Characterization Of Semiconductor Materials by McGuire G. E. (ed.) PDF

By McGuire G. E. (ed.)

Characterization of semiconductor fabrics and techniques used to symbolize them should be defined generally during this new Noyes sequence. Written via specialists in each one topic region, the sequence will current the main up to date details to be had during this swiftly advancing box. comprises chapters on electric Characterization, Ion Mass Spectrometry, Photoelectron Spectroscopy, Ion/Solid Interactions and extra.

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Morgan I. PRINCIPl_E OF SIHS In secondary ion mass spectrometry (SIHS) [l-3], the sample maintained in a vacuum chamber is bombarded by a monoenergetic beam of primary ions, Fig. 1. As a result, particles are sputtered from the sample surface, some of which are in the form of secondary ions. The positive or negative ions are extracted into a mass analyzer and separated according to their mass-to-charge (m/e) ratio. For good mass resolution, an energy analyzer is necessary to permit only those secondary ions within a narrow energy range to enter the mass analyzer.

Sot. 132,2992-2997 (1985). Electrical Characterization of Semiconductor Materials and Devices 45 81. S. Li Determination of Minority Carrier Diffusion Length in InP by Surface Photovoltage Measurement, Appl. Phys. Lett. 29,126-127 (1976). 88. R. Moore Theory and Experiment on the Surface Photovoltage Diffusion Length Measurement as Applied to Amorphous Silicon, J. Appl. Phys. 54, 222-228 (1983). 89. M. Zerbst Relaxation Effects at Semiconductor-Insulator Interfaces (in German), Z. Angew. Phys. 22,30-33 (1966).

Surface recombination at the back contact plays an important role for base thicknesses less than the diffusion length. 1781 Yet another complication is recombination in the highly doped emitter which we have neglected. The emitter lifetime is usually much lower than the base lifetime. The excess carriers in the emitter recombine much more rapidly than those in the base and some of the excess base carriers are injected into the emitter. The junction voltage decay is therefore reduced. This effect becomes negligible for t 2 2*52r base and the V(t)-t decay becomes linear with slope kT/qTr,base, where 2r baie is the base lifetime, regardless of emitter recombination or emitter bandgap narrowing.

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