Download Defects in Semiconductors, Volume 91 by Lucia Romano, Vittorio Privitera, Chennupati Jagadish PDF
By Lucia Romano, Vittorio Privitera, Chennupati Jagadish
This quantity, quantity ninety one within the Semiconductor and Semimetals sequence, specializes in defects in semiconductors. Defects in semiconductors support to give an explanation for a number of phenomena, from diffusion to getter, and to attract theories on fabrics' habit in keeping with electric or mechanical fields.
The quantity contains chapters focusing particularly on electron and proton irradiation of silicon, aspect defects in zinc oxide and gallium nitride, ion implantation defects and shallow junctions in silicon and germanium, and lots more and plenty extra. it's going to support aid scholars and scientists of their experimental and theoretical paths.
- Expert contributors
- Reviews of crucial fresh literature
- Clear illustrations
- A wide view, together with exam of defects in several semiconductors
Read or Download Defects in Semiconductors, Volume 91 PDF
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Additional info for Defects in Semiconductors, Volume 91
Experimentally, phase formation was observed in a variety of systems. , Pignatel and Queirolo, 1980). This layer maintains the boron concentration at solid solubility during in-diffusion. , 1977). Nowadays, ion implantation allows to dope samples considerably above solid solubility. , 1994). , 2012). Dopants in precipitates are usually electrically neutralized and immobilized. In addition, as mentioned above, dopant precipitation is often found to be associated with an injection of intrinsic point defects to accommodate the changes in molar volume.
100, 113714. , 2006b. A simulation model for the density of states and for incomplete ionization in crystalline silicon. II. Investigation of Si: As and Si:B and usage in device simulation. J. Appl. Phys. 100, 113715. , 1978. Boron in near-intrinsic ‹100› and ‹111› silicon under inert and oxidizing ambients—diffusion and segregation. J. Electrochem. Soc. 125, 813–819. , 1984. HREM of SiP precipitates at the (111) silicon surface during phosphorus predeposition. Ultramicroscopy 14, 97–106. , 1989.
95, 1134–1140. , 2012. Precipitation of antimony implanted into silicon. ECS Trans. 41 (34), 9–17. , 1984. Protonstimulated diffusion of antimony in silicon. Sov. Phys. Semicond. 18 (5), 598–599. , 1985. Diffusion of a substitutional impurity in a crystal irradiated with ions. Sov. Phys. Tech. Phys. 30 (11), 1283–1285. , 1989. A model for phosphorus segregation at the silicon-silicon dioxide interface. Appl. Phys. A 49, 671–675. , 1991. Parameters for point-defect diffusion and recombination. IEEE Trans.