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3. Photonic Crystal Based Polarization Beam Splitter 43 write-field were employed here. The whole pattern was then transferred to a hard mask (100nm Al layer) with E-gun evaporation (cf. Sec. 2) and lift-off technology (cf. Sec. 2). The silicon structure was fabricated using ICP-RIE technology with the SF6 and C4 F8 gas mixture (see Tab. 4 for the etching process paramters; “etching recipe 2” was employed). Finally, the Al mask was removed with a hot sulphuric-acid–peroxide solution2 . The effective area of the present PBS is ∼ 20 × 20µm2 .

2. Sketch of a Si nanowire waveguide. 4 100 300 500 width w (nm) 700 900 Fig. 3. Propagation constants of different modes in Si nanowire waveguides. 455. The solid lines are for TE modes, and the dashed lines are for TM modes. The dash-doted line denotes nSiO2 . Below this line, modes become leaky. , the separation required for a negligible coupling) is very small (∼2µm) for Si nanowire waveguides [67]. However, when a conventional layout is used (cf. Fig. , a large diffraction order) between two adjacent waveguides for the case of DWDM.

The contrast is related to the difference between the dose D1 and D2 , here, D2 is the highest allowed dose at which no resist will be removed after developing. The smaller this difference, the higher the contrast. A high contrast resist will usually have wider process latitude as well as more vertical sidewall profiles. The sensitivity and contrast can be defined in a similar way for a negative resist. xml=solutions%7CLithography+%26+nanoengineering% 7CRAITH150 26 Chapter 3. Fabrication and Characterization is always preferred.

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