Download Designing Bipolar Transistor Radio Frequency Integrated by Sweet A.A. PDF
By Sweet A.A.
This sensible source bargains engineers an in-depth and up to date figuring out of bipolar transistor RFIC layout. in contrast to so much books out there that target GaAs MESFET or silicon CMOS strategy expertise, this distinctive quantity is devoted completely to RFIC designs in keeping with bipolar expertise. before, serious GaAs HBT and SiGe HBT technique applied sciences were principally overlooked in reference books. This booklet fills this hole, supplying a close therapy of this more and more very important topic.Professionals find a wide selection of circuit topologies which are optimized for max functionality with bipolar units. From discussions of key purposes (Bluetooth, UWB, GPS, WiMax) and architectures to in-depth assurance of fabrication applied sciences and amplifier layout to a glance at functionality trade-offs and creation expenditures, this booklet palms engineers with entire layout knowledge for his or her difficult paintings within the box.
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Extra resources for Designing Bipolar Transistor Radio Frequency Integrated Circuits
15 The block diagram of a double-conversion superheterodyne receiver. This architecture solves the high-IF-versus-low-IF-frequency dilemma that must be confronted when choosing an image-rejecting band-pass filter for a single-conversion superheterodyne receiver. 4 Zero IF Receivers 37 ponents. Both the input band-pass filter and the image filter are too selective (high Q) to be realized on-chip. Therefore, they must be treated as off-chip components and attached to the PCB next to the RFIC chip.
Using such techniques, it is conceivable that a cognitive radio could be designed whose only analog content would consist of an LNA and a PA. Such an all-digital radio would be truly software defined in every sense of the word. 10 list frequency allocations and physical layer standards for a number of popular wireless standards for which RFICs represent an essential enabling technology. 67 PN chip/code symbol • PN chips/modulation symbol: 256 PN chip/modulation symbol • PN chip/Walsh chip: 4 PN chip/Walsh chip MMDS • 2,500–2,700 MHz • 6 MHz channel bandwidth • Thirty-three channels • Range: 35 mi.
HBTs have superior electrical characteristics at high frequencies, making them ideal devices for RFICs operating at the frequencies of wireless communications. The initial photolithographic wafer fabrication of GaAs HBT RFIC circuits consists of patterning and fabricating the HBT devices themselves. This process involves successive steps involving selective etching of the wafer’s epitaxial layers. Upon etching these layers into a mesa structure with collector, base, and emitter structures formed with the proper length and width dimensions, a metal contact layer is patterned and deposited on top of the corresponding semiconductor layer.