Download Electronic circuit analysis and design by Donald Neamen PDF

By Donald Neamen

Half I Semiconductor units and simple functions 1 --
Chapter 1 Semiconductor fabrics and Diodes three --
1.1 Semiconductor fabrics and houses four --
1.1.1 Intrinsic Semiconductors four --
1.1.2 Extrinsic Semiconductors 7 --
1.1.3 go with the flow and Diffusion Currents nine --
1.1.4 extra companies eleven --
1.2 The pn Junction 12 --
1.2.1 The Equilibrium pn Junction 12 --
1.2.2 Reverse-Biased pn Junction 14 --
1.2.3 Forward-Biased pn Junction sixteen --
1.2.4 excellent Current-Voltage courting 17 --
1.2.5 pn Junction Diode 18 --
1.3 Diode Circuits: DC research and types 23 --
1.3.1 new release and Graphical research recommendations 24 --
1.3.2 Piecewise Linear version 27 --
1.3.3 laptop Simulation and research 30 --
1.3.4 precis of Diode types 31 --
1.4 Diode Circuits: AC identical Circuit 31 --
1.4.1 Sinusoidal research 31 --
1.4.2 Small-Signal identical Circuit 35 --
1.5 different Diode kinds 35 --
1.5.1 sunlight cellphone 35 --
1.5.2 Photodiode 36 --
1.5.3 Light-Emitting Diode 36 --
1.5.4 Schottky Barrier Diode 37 --
1.5.5 Zener Diode 39 --
Chapter 2 Diode Circuits forty nine --
2.1 Rectifier Circuits 50 --
2.1.1 Half-Wave Rectification 50 --
Problem-Solving process: Diode Circuits fifty one --
2.1.2 Full-Wave Rectification fifty three --
2.1.3 Filters, Ripple Voltage, and Diode present fifty six --
2.1.4 Voltage Doubler Circuit sixty three --
2.2 Zener Diode Circuits sixty four --
2.2.1 excellent Voltage Reference Circuit sixty four --
2.2.2 Zener Resistance and percentage legislation sixty seven --
2.3 Clipper and Clamper Circuits sixty eight --
2.3.1 Clippers sixty eight --
2.3.2 Clampers seventy two --
2.4 Multiple-Diode Circuits seventy five --
2.4.1 instance Diode Circuits seventy five --
Problem-Solving process: a number of Diode Circuits seventy nine --
2.4.2 Diode common sense Circuits eighty --
2.5 Photodiode and LED Circuits eighty two --
2.5.1 Photodiode Circuit eighty two --
2.5.2 LED Circuit eighty three --
Chapter three The Bipolar Junction Transistor ninety seven --
3.1 easy Bipolar Junction Transistor ninety seven --
3.1.1 Transistor buildings ninety eight --
3.1.2 npn Transistor: Forward-Active Mode Operation ninety nine --
3.1.3 pnp Transistor: Forward-Active Mode Operation 104 --
3.1.4 Circuit Symbols and Conventions a hundred and five --
3.1.5 Current-Voltage features 107 --
3.1.6 Nonideal Transistor Leakage Currents and Breakdown Voltage a hundred and ten --
3.2 DC research of Transistor Circuits 113 --
3.2.1 Common-Emitter Circuit 114 --
3.2.2 Load Line and Modes of Operation 117 --
Problem-Solving approach: Bipolar DC research a hundred and twenty --
3.2.3 universal Bipolar Circuits: DC research 121 --
3.3 simple Transistor purposes 131 --
3.3.1 swap 131 --
3.3.2 electronic good judgment 133 --
3.3.3 Amplifier 134 --
3.4 Bipolar Transistor Biasing 138 --
3.4.1 unmarried Base Resistor Biasing 138 --
3.4.2 Voltage Divider Biasing and Bias balance one hundred forty --
3.4.3 built-in Circuit Biasing one hundred forty five --
3.5 Multistage Circuits 147 --
Chapter four uncomplicated BJT Amplifiers 163 --
4.1 Analog indications and Linear Amplifiers 163 --
4.2 The Bipolar Linear Amplifier a hundred sixty five --
4.2.1 Graphical research and AC similar Circuit 166 --
4.2.2 Small-Signal Hybrid-[pi] similar Circuit of the Bipolar Transistor one hundred seventy --
Problem-Solving process: Bipolar AC research one hundred seventy five --
4.2.3 Hybrid-[pi] an identical Circuit, together with the Early impact 176 --
4.2.4 multiplied Hybrid-[pi] similar Circuit a hundred and eighty --
4.2.5 different Small-Signal Parameters and an identical Circuits one hundred eighty --
4.3 simple Transistor Amplifier Configurations 185 --
4.4 Common-Emitter Amplifiers 189 --
4.4.1 uncomplicated Common-Emitter Amplifier Circuit a hundred ninety --
4.4.2 Circuit with Emitter Resistor 192 --
4.4.3 Circuit with Emitter-Bypass Capacitor 196 --
4.4.4 complex Common-Emitter Amplifier options 199 --
4.5 AC Load Line research two hundred --
4.5.1 AC Load Line two hundred --
4.5.2 greatest Symmetrical Swing 203 --
Problem-Solving strategy: greatest Symmetrical Swing 204 --
4.6 Common-Collector (Emitter-Follower) Amplifier 205 --
4.6.1 Small-Signal Voltage achieve 205 --
4.6.2 enter and Output Impedance 207 --
4.6.3 Small-Signal present achieve 209 --
4.7 Common-Base Amplifier 214 --
4.7.1 Small-Signal Voltage and present profits 214 --
4.7.2 enter and Output Impedance 216 --
4.8 the 3 uncomplicated Amplifiers: precis and comparability 218 --
4.9 Multistage Amplifiers 219 --
4.9.1 Multistage research: Cascade Configuration 219 --
4.9.2 Cascode Configuration 223 --
4.10 energy concerns 226 --
Chapter five The Field-Effect Transistor 243 --
5.1 MOS Field-Effect Transistor 243 --
5.1.1 Two-Terminal MOS constitution 244 --
5.1.2 n-Channel Enhancement-Mode MOSFET 246 --
5.1.3 excellent MOSFET Current-Voltage features 248 --
5.1.4 Circuit Symbols and Conventions 253 --
5.1.5 extra MOSFET buildings and Circuit Symbols 253 --
5.1.6 precis of Transistor Operation 258 --
5.1.7 Nonideal Current-Voltage features 259 --
5.2 MOSFET DC Circuit research 262 --
5.2.1 Common-Source Circuit 263 --
5.2.2 Load Line and Modes of Operation 267 --
Problem-Solving method: MOSFET DC research 268 --
5.2.3 universal MOSFET Configurations: DC research 269 --
5.2.4 Constant-Current resource Biasing 281 --
5.3 simple MOSFET functions: change, electronic common sense Gate, and Amplifier 283 --
5.3.1 NMOS Inverter 283 --
5.3.2 electronic common sense Gate 285 --
5.3.3 MOSFET Small-Signal Amplifier 287 --
5.4 Junction Field-Effect Transistor 287 --
5.4.1 pn JFET and MESFET Operation 288 --
5.4.2 Current-Voltage features 292 --
5.4.3 universal JFET Configurations: DC research 295 --
Chapter 6 simple FET Amplifiers 313 --
6.1 The MOSFET Amplifier 313 --
6.1.1 Graphical research, Load strains, and Small-Signal Parameters 314 --
6.1.2 Small-Signal similar Circuit 318 --
Problem-Solving approach: MOSFET AC research 320 --
6.1.3 Modeling the physique impression 322 --
6.2 easy Transistor Amplifier Configurations 323 --
6.3 The Common-Source Amplifier 324 --
6.3.1 A uncomplicated Common-Source Configuration 324 --
6.3.2 Common-Source Amplifier with resource Resistor 329 --
6.3.3 Common-Source Circuit with resource pass Capacitor 331 --
6.4 The Source-Follower Amplifier 334 --
6.4.1 Small-Signal Voltage achieve 334 --
6.4.2 enter and Output Impedance 339 --
6.5 The Common-Gate Configuration 341 --
6.5.1 Small-Signal Voltage and present earnings 341 --
6.5.2 enter and Output Impedance 343 --
6.6 the 3 easy Amplifier Configurations: precis and comparability 345 --
6.7 Single-Stage built-in Circuit MOSFET Amplifiers 345 --
6.7.1 NMOS Amplifier with Enhancement Load 345 --
6.7.2 NMOS Amplifier with Depletion Load 350 --
6.7.3 NMOS Amplifier with PMOS Load 353 --
6.8 Multistage Amplifiers 355 --
6.8.1 DC research 356 --
6.8.2 Small-Signal research 360 --
6.9 uncomplicated JFET Amplifiers 362 --
6.9.1 Small-Signal identical Circuit 362 --
6.9.2 Small-Signal research 364 --
Chapter 7 Frequency reaction 383 --
7.1 Amplifier Frequency reaction 384 --
7.1.1 identical Circuits 384 --
7.1.2 Frequency reaction research 385 --
7.2 approach move capabilities 386 --
7.2.1 s-Domain research 386 --
7.2.2 First-Order features 388 --
7.2.3 Bode Plots 388 --
7.2.4 Short-Circuit and Open-Circuit Time Constants 394 --
7.3 Frequency reaction: Transistor Amplifiers with Circuit Capacitors 398 --
7.3.1 Coupling Capacitor results 398 --
Problem-Solving strategy: Bode Plot of achieve significance 404 --
7.3.2 Load Capacitor results 405 --
7.3.3 Coupling and cargo Capacitors 407 --
7.3.4 skip Capacitor results 410 --
7.3.5 mixed results: Coupling and pass Capacitors 414 --
7.4 Frequency reaction: Bipolar Transistor 416 --
7.4.1 increased Hybrid-[pi] identical Circuit 416 --
7.4.2 Short-Circuit present achieve 418 --
7.4.3 Cutoff Frequency 420 --
7.4.4 Miller impression and Miller Capacitance 422 --
7.5 Frequency reaction: The FET 426 --
7.5.1 High-Frequency identical Circuit 426 --
7.5.2 Unity-Gain Bandwidth 428 --
7.5.3 Miller influence and Miller Capacitance 431 --
7.6 High-Frequency reaction of Transistor Circuits 433 --
7.6.1 Common-Emitter and Common-Source Circuits 433 --
7.6.2 Common-Base, Common-Gate, and Cascode Circuits 436 --
7.6.3 Emitter- and Source-Follower Circuits 444 --
7.6.4 High-Frequency Amplifier layout 448 --
Chapter eight Output phases and gear Amplifiers 469 --
8.1 strength Amplifiers 469 --
8.2 strength Transistors 470 --
8.2.1 energy BJTs 470 --
8.2.2 energy MOSFETs 474 --
8.2.3 warmth Sinks 477 --
8.3 sessions of Amplifiers 480 --
8.3.1 Class-A Operation 481 --
8.3.2 Class-B Operation 484 --
8.3.3 Class-AB Operation 489 --
8.3.4 Class-C Operation 493 --
8.4 Class-A energy Amplifiers 494 --
8.4.1 Inductively Coupled Amplifier 494 --
8.4.2 Transformer-Coupled Common-Emitter Amplifier 495 --
8.4.3 Transformer-Coupled Emitter-Follower Amplifier 497 --
8.5 Class-AB Push-Pull Complementary Output phases 499 --
8.5.1 Class-AB Output level with Diode Biasing 499 --
8.5.2 Class-AB Biasing utilizing the V[subscript BE] Multiplier 501 --
8.5.3 Class-AB Output degree with enter Buffer Transistors 504 --
8.5.4 Class-AB Output level using the Darlington Configuration 507 --
Part II Analog Electronics 519 --
Chapter nine definitely the right Operational Amplifier 521 --
9.1 The Operational Amplifier 521 --
9.1.1 excellent Parameters 522 --
9.1.2 improvement of the fitting Parameters 523 --
9.1.3 research technique 525 --
9.1.4 PSpice Modeling 526 --
9.2 Inverting Amplifier 526 --
9.2.1 uncomplicated Amplifier 527 --
Problem-Solving approach: excellent Op-Amp Circuits 529 --
9.2.2 Amplifier with a T-Network 530 --
9.2.3 influence of Finite achieve 532 --
9.3 Summing Amplifier 534 --
9.4 Noninverting Amplifier 536 --
9.4.1 simple Amplifier 536 --
9.4.2 Voltage Follower 537

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Both l:; and 111 are funclions of temperature, lhe diode chan1cteristics also vary with temperature. The temperature-related variations in forward-bias cllaracter istics •tre illustrated in Figure 1 . 1 8. 17 junction diode: The basic pn (ai simpl�1ed geomery and (b) circuit symbOI. 18 () Forward-bias characteristics verSIJs temperature forward-bfas voltage decreases as temperature increases. For silicon diodes, the change is approximately 2 mV;°C. The parameter Is is a function of the intrinsic carrier concentration n;.

5) light-emitting diode. Schottky REVIEW QUESTIONS I. Dcicrihc an intrinsic semiconductor ma1erial. What is meant by the intrinsic c;mier concentration? J)cscnlle lhc concept of an elertron and a hok a$ clrnree arriers ( in the semicon· duclor material. 3. ductor material. What is the value of the electron c:nncentralion in an n·type material. and what is the' value of the hole conccntra· 1io11 in a p-type material? :�crib.! the concepts of drift current and diffusion current in a semiconductor nia1erial.

3 l(a). :ircuit an1' V1,s "" 5V_ R "' 5kfl, V,. = O 1vit1e the analysis into two pans: the de analysis and the a1: analysis. .

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